整合自組裝奈米球微影與光輔助電化學蝕刻之奈米柱狀陣列製作技術
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2005
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本研究結合奈米球微影以及光輔助電化學蝕刻兩項技術之優點，用於製作高深寬比的奈米柱狀陣列。聚苯乙烯奈米球可藉由材料本身的自組裝效應，能輕易定義出奈米等級的圖形陣列，並可由球體尺寸的選擇與堆積層數的控制，有效地定義圖案形狀以及圖案尺寸，因此稱為奈米球微影術。同時，本研究將採用光輔助電化學蝕刻，以滿足奈米柱高深寬比的蝕刻需求，此技術有著易於形成奈米級孔洞的優點，其蝕刻深度與寬度之比更可達到250：1，優於感應耦合電漿離子蝕刻術(Inductively coupled plasma reactive ion etching, ICP-RIE)的蝕刻效果。兩項技術的結合可代替如電子束(Electron beam)、深紫外光(Deep ultraviolet, DUV)、X光(X-ray)微影技術，與感應耦合電漿離子蝕刻技術等昂貴的設備，因此非常適合用於製作高深寬比之奈米柱結構。
實驗的結果証實利用旋轉塗佈搭配震盪塗佈的方式，可將奈米球規則地排列於矽基板上，並且定義出單層與雙層奈米等級的圖案。而在光輔助電化學蝕刻的實驗中，証實了在添加界面活性劑的作用下，蝕刻蝕刻液的接觸角可降低至15度，具有超親水性的特性，並大幅改善擴孔現像，使得奈米級的高深寬比孔洞能夠輕易的產生。當使用5 V的蝕刻電壓與HF濃度2.5 wt%的蝕刻液，經過5分鐘的蝕刻後，能夠產生高度6.2 m，直徑為90 nm的高深寬比孔洞，而孔洞的深寬比可達到68:1。在光輔助電化學蝕刻中，當孔洞底端氟離子數量遠少餘電洞數量，孔洞側壁的蝕刻現象將非常明顯，並且蝕刻深度則開始隨著電壓的增加而減少。本實驗目前可製作出高度為1m深寬比達20:1~14:1的奈米柱。奈米柱將隨著奈米球的定義而排列，因此具有陣列化的排列現象。
關鍵字：奈米柱，奈米球，光輔助電化學蝕刻，自組裝。
The research has developed a novel method of Nanopillar array through the combination of integrating self-assembly nanosphere lithography and photo-assisted electrochemical etching technique. The self-assembly nanosphere lithography technique can be used to define nano-pattern array by the novel coating method. The novel coating method of nanosphere can regular arrange nanosphere in some region of whole 1 cm2 wafer. In experiment of photo-assisted electrochemical etching, surfactant can reduce contact angle of electrolyte and obtain high aspect ratio of nanohole easily. The highest aspect ratio of nanohole is 68:1. We have finished the novel fabrication process of nanopillar array without expensive equipments. Nanopillar can regular arranged, which dimensions is 70 nm~50 nm wide and 1000 nm tall (aspect ratio, 14~20:1). Keywords: nanopillar, nanosphere, electrochemical etching, self-assembly.
The research has developed a novel method of Nanopillar array through the combination of integrating self-assembly nanosphere lithography and photo-assisted electrochemical etching technique. The self-assembly nanosphere lithography technique can be used to define nano-pattern array by the novel coating method. The novel coating method of nanosphere can regular arrange nanosphere in some region of whole 1 cm2 wafer. In experiment of photo-assisted electrochemical etching, surfactant can reduce contact angle of electrolyte and obtain high aspect ratio of nanohole easily. The highest aspect ratio of nanohole is 68:1. We have finished the novel fabrication process of nanopillar array without expensive equipments. Nanopillar can regular arranged, which dimensions is 70 nm~50 nm wide and 1000 nm tall (aspect ratio, 14~20:1). Keywords: nanopillar, nanosphere, electrochemical etching, self-assembly.
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奈米柱, 奈米球, 光輔助電化學蝕刻, 自組裝, nanopillar, nanosphere, electrochemical etching, self-assembly