三元熱電材料應用於微致冷晶片之研製

Abstract

本研究以電化學沉積的方式電鍍n型與p型 Bi-Te-Se熱電材料，同時，藉由平行線量測法對電化學沉積的熱電材料，量測其熱傳導係數，並獲得相關的熱電特性。最後利用已知熱電特性的熱電材料，搭配微機電製程技術，進行微致冷晶片之研製。 以平行線量測法成功量取熱電材料的熱傳導係數，量測結果n-typed Bi-Te-Se熱電材料，其熱傳導係數為0.185 W/mK，而p-typed Bi-Te-Se熱電材料，其熱傳導係數為0.633 W/mK。藉由熱電優值公式獲得n-typed Bi-Te-Se熱電材料，其熱電優值為17.34×10-4/K，且在常溫工作環境下的ZT值為0.52；而p-typed Bi-Te-Se熱電材料，其熱電優值為53.189×10-3/K，且在常溫工作環境下的ZT值為1.596。最後，將已知熱電特性的熱電材料，藉由電化學沉積搭配微機電製程技術，成功研製出24對的微致冷晶片，其熱電接腳尺寸為600 um的方形陣列，電鍍高度約為10 um，後續將量測其致冷性能，並比較在不同對數條件下的致冷能力。

In this study, n-typed and p-typed Bi-Te-Se thermoelectric materials are electroplated by electrochemical deposition method. The thermal conductivity and related thermoelectric characteristics were measured by parallel line method. Finally, the n-type and p-type Bi-Te-Se materials with known properties were applied to fabricate micro-cooler by MEMS process. The thermal conductivity were measured by parallel line method. For n-typed Bi-Te-Se material, the thermal conductivity is 0.185 W/mK, and for p-typed Bi-Te-Se material, the thermal conductivity is 0.633 W/mK. The figure of merit of n-typed Bi-Te-Se material is 17.34×10-4 /K, and room-temperature ZT value is 0.52. The figure of merit of p-typed Bi-Te-Se material is 53.189×10-4 /K, and room-temperature ZT value is 1.596. Finally, micro-coolers with 24 pairs were fabricated by electrochemical deposition and MEMS techniques, in which the dimension of the thermoelectric legs is 600 m and thickness of the electroplated is 10 m. Furthermore, the comparison of the cooling capability under different conditions will be measured.