A V-band fully-integrated CMOS distributed active transformer power amplifier for 802.15.TG3c wireless personal area network applications
| dc.contributor | 國立臺灣師範大學應用電子科技學系 | zh_tw |
| dc.contributor.author | Yung-Nien Jen | en_US |
| dc.contributor.author | Jeng-Han Tsai | en_US |
| dc.contributor.author | Tian-Wei Huang | en_US |
| dc.contributor.author | Huei Wang | en_US |
| dc.date.accessioned | 2014-10-30T09:28:46Z | |
| dc.date.available | 2014-10-30T09:28:46Z | |
| dc.date.issued | 2008-10-15 | zh_TW |
| dc.description.abstract | A 60-GHz fully-integrated and broadband distributed active transformer (DAT) power amplifier (PA) is implemented in 90-nm CMOS technology. The PA performs a flat small signal gain of 26 plusmn 1 dB from 57 to 69 GHz which covers full band for 60-GHz wireless personal network (WPAN) applications. By using the DAT output combine structure, this PA delivers 18-dBm measured output power with 12.2% PAE at 60 GHz with a compact chip size. To the best of our knowledge, this DAT CMOS PA demonstrates the highest output power among the reported 60-GHz CMOS PAs to date. | en_US |
| dc.description.uri | http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4674486 | zh_TW |
| dc.identifier | ntnulib_tp_E0611_02_016 | zh_TW |
| dc.identifier.uri | http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32275 | |
| dc.language | en | zh_TW |
| dc.relation | IEEE Compound Semiconductor IC Symposium (CSICS),Monterey, CA,pp1-4. (EI, NSC 96-2219-E-002-021, NSC 95-2219-E-002-011, NSC 95-2221-E-002-084-MY2, NSC93-2752-E-002-003-PAE, and 95R0062-AE00-01) | en_US |
| dc.subject.other | CMOS | en_US |
| dc.subject.other | Power Amplifier | en_US |
| dc.subject.other | V-band | en_US |
| dc.subject.other | DAT | en_US |
| dc.subject.other | Fullyintegrated | en_US |
| dc.title | A V-band fully-integrated CMOS distributed active transformer power amplifier for 802.15.TG3c wireless personal area network applications | en_US |