探討氮化鈦介面層應用於氧化鋁鉿鐵電記憶體之電性可靠度研究
| dc.contributor | 鄭淳護 | zh_TW |
| dc.contributor | Cheng, Chun-Hu | en_US |
| dc.contributor.author | 紀柏宇 | zh_TW |
| dc.contributor.author | Chi, Po-Yu | en_US |
| dc.date.accessioned | 2025-12-09T08:06:04Z | |
| dc.date.available | 2030-01-09 | |
| dc.date.issued | 2025 | |
| dc.description.sponsorship | 機電工程學系 | zh_TW |
| dc.identifier | 61173031H-46514 | |
| dc.identifier.uri | https://etds.lib.ntnu.edu.tw/thesis/detail/2e7401e219000fd10228723a1c9d9e14/ | |
| dc.identifier.uri | http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/125202 | |
| dc.language | 中文 | |
| dc.title | 探討氮化鈦介面層應用於氧化鋁鉿鐵電記憶體之電性可靠度研究 | zh_TW |
| dc.title | Electrical and Reliability Investigation of Hafnium Aluminum Oxide Ferroelectric Memory Using a Titanium Nitride Interface Layer | en_US |
| dc.type | 學術論文 |