A 53-to-67 GHz low-power and wide-locking-range injection locked frequency divider with forward body bias

dc.contributor國立臺灣師範大學應用電子科技學系zh_tw
dc.contributor.authorJeng-Han Tsaien_US
dc.contributor.authorYu-Hang Wongen_US
dc.date.accessioned2014-10-30T09:28:43Z
dc.date.available2014-10-30T09:28:43Z
dc.date.issued2011-06-01zh_TW
dc.description.abstractA 53–67 GHz wide locking range injection-locked frequency divider (ILFD) has been designed and fabricated using 0.13-μm CMOS process.By using forward body bias technique, the proposed ILFD demonstrates good performance of the wide locking range while maintaining low DC power consumption. Via a 0 dBm incident signal power, an input locking rage greater than 14 GHz (>23%) is achieved with 4 mW from supply voltage of 0.8 V. If the supply voltage further reduces to 0.6 V, the input locking rage is 6 GHz (10%) while consuming only 1.2 mW. Compared to previous reported works in high-speed CMOS FD, the presented ILFD achieves superior figure of merit (FOM). Without extra voltage control mechanisms to increase the locking range, this FD covers whole 57–64 GHz band is suitable for integration into a 60 GHz WPAN phase-locked loop systemen_US
dc.description.urihttp://onlinelibrary.wiley.com/doi/10.1002/mop.25989/pdfzh_TW
dc.identifierntnulib_tp_E0611_01_005zh_TW
dc.identifier.issn0895-2477zh_TW
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32241
dc.languageenzh_TW
dc.publisherWiley-Blackwellen_US
dc.relationMicrowave and Optical Technology Letters, 53(6), 1386-1389.en_US
dc.subject.otherCMOSen_US
dc.subject.otherinjection-locked frequency divideren_US
dc.subject.othermillimeter waveen_US
dc.subject.otherbody biasen_US
dc.subject.otherwide locking rangeen_US
dc.subject.other60 GHzen_US
dc.subject.otherWPANen_US
dc.titleA 53-to-67 GHz low-power and wide-locking-range injection locked frequency divider with forward body biasen_US

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