A Sub-1V Fourth-Bandpass Delta-Sigma Modulator

dc.contributor國立臺灣師範大學電機工程學系zh_tw
dc.contributor.authorHsiang-Hui Changen_US
dc.contributor.authorChien-Hung Kuoen_US
dc.contributor.authorMing-Huang Liuen_US
dc.contributor.authorShen-Iuan Liuen_US
dc.date.accessioned2014-10-30T09:28:40Z
dc.date.available2014-10-30T09:28:40Z
dc.date.issued2003-12-01zh_TW
dc.description.abstractA sub-1V fourth-order bandpass delta-sigma modulator is presented in this paper. Using the switched opamp technique enables the modulator to operate at only 0.8 V supply voltage without using voltage multipliers or bootstrapping switches. A two-path structure is applied to relax the settling requirement. Implemented in a 0.25-μm one-poly, five-metal standard CMOS process, the prototype modulator exhibits a signal-to-noise-plus-distortion ratio (SNDR) of 58.2 db and a dynamic range (DR) of 64 db in a 60 KHz signal bandwidth centered at 1.25 MHz while consuming 2.5 mW and occupying an active area of 2.11 mm2.en_US
dc.description.urihttp://link.springer.com/content/pdf/10.1023%2FA%3A1026265624740zh_TW
dc.identifierntnulib_tp_E0610_01_006zh_TW
dc.identifier.issn0925-1030zh_TW
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32205
dc.languageenzh_TW
dc.publisherSpringer Verlag (Germany)en_US
dc.relationAnalog Integrated Circuits and Signal Processing, 37, 179-189.en_US
dc.subject.otherlow-voltageen_US
dc.subject.otherswitched-capacitoren_US
dc.subject.otherbandpass delta-sigma modulatoren_US
dc.subject.othertwo-path structureen_US
dc.titleA Sub-1V Fourth-Bandpass Delta-Sigma Modulatoren_US

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