A Sub-1V Fourth-Bandpass Delta-Sigma Modulator
dc.contributor | 國立臺灣師範大學電機工程學系 | zh_tw |
dc.contributor.author | Hsiang-Hui Chang | en_US |
dc.contributor.author | Chien-Hung Kuo | en_US |
dc.contributor.author | Ming-Huang Liu | en_US |
dc.contributor.author | Shen-Iuan Liu | en_US |
dc.date.accessioned | 2014-10-30T09:28:40Z | |
dc.date.available | 2014-10-30T09:28:40Z | |
dc.date.issued | 2003-12-01 | zh_TW |
dc.description.abstract | A sub-1V fourth-order bandpass delta-sigma modulator is presented in this paper. Using the switched opamp technique enables the modulator to operate at only 0.8 V supply voltage without using voltage multipliers or bootstrapping switches. A two-path structure is applied to relax the settling requirement. Implemented in a 0.25-μm one-poly, five-metal standard CMOS process, the prototype modulator exhibits a signal-to-noise-plus-distortion ratio (SNDR) of 58.2 db and a dynamic range (DR) of 64 db in a 60 KHz signal bandwidth centered at 1.25 MHz while consuming 2.5 mW and occupying an active area of 2.11 mm2. | en_US |
dc.description.uri | http://link.springer.com/content/pdf/10.1023%2FA%3A1026265624740 | zh_TW |
dc.identifier | ntnulib_tp_E0610_01_006 | zh_TW |
dc.identifier.issn | 0925-1030 | zh_TW |
dc.identifier.uri | http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32205 | |
dc.language | en | zh_TW |
dc.publisher | Springer Verlag (Germany) | en_US |
dc.relation | Analog Integrated Circuits and Signal Processing, 37, 179-189. | en_US |
dc.subject.other | low-voltage | en_US |
dc.subject.other | switched-capacitor | en_US |
dc.subject.other | bandpass delta-sigma modulator | en_US |
dc.subject.other | two-path structure | en_US |
dc.title | A Sub-1V Fourth-Bandpass Delta-Sigma Modulator | en_US |