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氮化物硬質薄膜具高硬度、化學穩定性外,並提升耐磨耗、腐蝕性,降低使用成本。本研究使用直流磁控濺鍍製備氮化物多層膜(TiN/TiAlN),瓷金刀具(NX2525)、SUS304不銹鋼及蘇打玻璃為基材。 應用田口實驗設計,L9 (34)直交表,探討TiN緩衝層(Buffer layer)濺鍍參數,包括: 基板溫度、濺鍍功率、氮氬比、基板偏壓,影響氮化物多層膜(基材/ Buffer layer /TiAlN)微結構及機械性質之研究。 實驗結果,直交表L9(34)多層膜(基材/TiN/TiAlN),機械性質優於單一硬質薄膜(基材/TiAlN),其中,田口No.7參數緩衝層(TiN)有最佳硬度(413.0 HV)、彈性回復量(22.76 %),田口No.7參數製備多層膜(TiN/TiAlN)有最佳硬度(739.2 HV),彈性回復量(42.12 %),鍍層刀具銑削結果得知,No.7有較低之刀腹磨耗(16.2µm)與工件表面粗糙度(Ra=1.987µm),經過相互比對分析,緩衝層薄膜性質特性影響硬質薄膜。由灰關聯分析田口實驗及實驗驗證,顯示緩衝層最佳濺鍍參數: (Substrate temperature:Room、Ti DC power:150W、N2/(N2+Ar) flow ratio:45%、Substrate bias:-50V),有最佳硬度(431.0 HV)、彈性回復量(20.87 %),最佳濺鍍參數多層膜(TiN/TiAlN)有最佳硬度(747.4 HV)、彈性回復量(45.226 %),最佳濺鍍參數銑削結果,有最小刀腹磨耗(14.5µm)與工件表面粗糙鍍(Ra=1.632µm),工件表面粗糙度及刀腹磨耗改善率分別為17.7%,10.5%。 此外,本研究另探討基材電漿蝕刻與未蝕刻製備最佳參數多層膜(TiN/TiAlN)進行比對,根據薄膜性質分析與鍍層刀具銑削結果說明,薄膜硬度、彈性回復量、刀腹磨耗量及工件表面粗糙度值均有改善。顯示電漿蝕刻,使基材表面粗化,薄膜沉積性質較優良。
The nitride hard thin film has good properties such as high hardness and chemical stability which can protect coated materials to resist weariness and corrosion, and lower down the cost. This study used DC magnetron sputtering to fabricate muti-layer nitride (TiN/TiAlN), cermet cutting tool (NX2525), and stainless steel SUS304 with soda glass as substrate. Taguchi method with L9 (34) orthogonal arrays is used to study the effects of TiN buffer layer sputtering parameters on nitride multi-layer microstructure and mechanical properties. The sputtering parameters include temperature of substrate, sputtering power, helium-argon ratio and substrate bias. The experiments show that No. 7 of L9 (34) orthogonal arrays gives the best result. The multi-layer thin film (substrate/TiN/TiAlN) has better mechanical properties than those of single hard thin film (substrate/TiAlN). The buffer layer (TiN) has optimal hardness (413.0 HV) and elastic resilience (22.76%). The multi-layer thin film (TiN/TiAlN) has best hardness (739.2 HV) and elastic resilience (42.12 %). The milling results show that coated cutter has lower flank wear (16.2µm) and better surface roughness of workpiece (Ra = 1.987µm). The comparison shows the property of buffer layer has impact on the hard thin film. The grey relational analysis of results of experiment gives the best sputtering parameters as follows: substrate temperature: room, Ti DC power:150W, N2/(N2+Ar) flow ratio:45%, substrate bias:-50V. Those parameters generate hardness (431.0 HV) and elastic resilience (42.12 %) for buffer layer (TiN), hardness (747.4 HV) and elastic resilience (42.226 %) for best multi-layer thin film (TiN/TiAlN). The milling experiment of cutter coated by using the best sputtering parameters gives smallest flank wear (14.5µm) and surface roughness of workpiece (Ra=1.632µm), which shows the improvements of 17.7% and 10.5% respectively. The optimal manufacturing parameters for multi-layer film (TiN/TiAlN) were compared for substrate with and without plasma etching. According to the analysis of thin film and milling results of coated cutter, there are great improvements on the following properties: thin film hardness, elastic resilience, the wear on the flank of cutting tool and surface roughness of workpiece. It is shown that plasma etching make substrate surface rough and hence better thin film deposition quality.



氮化鈦, 氮化鋁鈦多層膜, 田口實驗設計, 直流磁控濺鍍, TiN buffer layer, TiAlN/TiN multi-layers, Taguchi method, DC magnetron sputtering (DCMS)