Please use this identifier to cite or link to this item: http://rportal.lib.ntnu.edu.tw:80/handle/77345300/76829
Title: High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
Authors: Lee, Ya-Ju
Yao, Yung-Chi
Huang, Chun-Ying
Lin, Tai-Yuan
Cheng, Li-Lien
Liu, Ching-Yun
Wang, Mei-Tan
Hwang, Jung-Min
Issue Date: 27-Aug-2014
Citation: Nanoscale Research Letters. 2014 Aug 27;9(1):433
Abstract: Abstract In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.
URI: http://dx.doi.org/10.1186/1556-276X-9-433
http://rportal.lib.ntnu.edu.tw/handle/77345300/76829
Appears in Collections:BMC Springer Open Data



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