Please use this identifier to cite or link to this item: http://rportal.lib.ntnu.edu.tw:80/handle/77345300/42365
Title: Quantum Dot Light-Emitting Diode Using Solution-Processable Graphene Oxide as the Anode Interfacial Layer.
Authors: 國立臺灣師範大學化學系
D.-Y. Wang
I.-S. Wang
I.-S. Huang
Y.-C. Yeh
S.-S. Li
K.-H. Tu
Chia-Chun Chen
C.-W. Chen
Issue Date: 10-May-2012
Publisher: American Chemical Society
Abstract: In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.
URI: http://rportal.lib.ntnu.edu.tw/handle/77345300/42365
ISSN: 1932-7447
Other Identifiers: ntnulib_tp_C0301_01_081
Appears in Collections:教師著作

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.