Please use this identifier to cite or link to this item: http://rportal.lib.ntnu.edu.tw:80/handle/77345300/42361
Title: Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS(2) nanocrystals embedded in poly(3-hexylthiophene)
Authors: 國立臺灣師範大學化學系
C.-W. Lin
D.-Y. Wang
Y. Tai
Y.-T. Jiang
M.-C. Chen
Chia-Chun Chen
Y.-J. Yang
Y.-F. Chen
Issue Date: 27-Jul-2011
Publisher: IOP Publishing
Abstract: Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS2 nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS2 NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS2 and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS2/P3HT offers a type-II band alignment.
URI: http://rportal.lib.ntnu.edu.tw/handle/77345300/42361
ISSN: 0022-3727
Other Identifiers: ntnulib_tp_C0301_01_077
Appears in Collections:教師著作

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