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|Title:||Correlated Electric Fluctuations in GaN Nanowire Devices|
|Publisher:||American Scientific Publishers|
|Abstract:||We report an experimental study on the correlation spectrums between different sections of a multi-contact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.|
|Appears in Collections:||教師著作|
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