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|Title:||On-chip Fabrication of Well-aligned and Contact-barrier-free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity|
J. T.-H. Tsai
|Abstract:||Building nanobridges: Direct integration of an ensemble of GaN nanowires (n) onto a microchip produces a viable nanobridge (NB) device with good alignment and contact performance, the design of which demonstrates the potential of nanowires for sensor development. These GaN NBs have strong surface-enhanced photoconductivity with ultrahigh responsivity|
|Appears in Collections:||教師著作|
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