Please use this identifier to cite or link to this item: http://rportal.lib.ntnu.edu.tw:80/handle/77345300/42337
Title: On-chip Fabrication of Well-aligned and Contact-barrier-free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity
Authors: 國立臺灣師範大學化學系
R.-S. Chen
S.-W. Wang
Z.-H. Lan
J. T.-H. Tsai
C.-T. Wu
L.-C. Chen
K.-H. Chen
Y.-S. Huang
Chia-Chun Chen
Issue Date: 1-Jul-2008
Publisher: Wiley-VCH Verlag
Abstract: Building nanobridges: Direct integration of an ensemble of GaN nanowires (n) onto a microchip produces a viable nanobridge (NB) device with good alignment and contact performance, the design of which demonstrates the potential of nanowires for sensor development. These GaN NBs have strong surface-enhanced photoconductivity with ultrahigh responsivity
URI: http://rportal.lib.ntnu.edu.tw/handle/77345300/42337
ISSN: 1613-6810
Other Identifiers: ntnulib_tp_C0301_01_053
Appears in Collections:教師著作

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