Please use this identifier to cite or link to this item: http://rportal.lib.ntnu.edu.tw:80/handle/77345300/42324
Title: Self-Regulating and Diameter-Selective Growth of GaN Nanowires
Authors: 國立臺灣師範大學化學系
C.-K. Kuo
C.-W. Hsu
C.-T. Wu
Z.-H. Lan
C.-Y. Mou
Y.-J. Yang
Chia-Chun Chen
K.-H. Chen
Issue Date: 14-Jun-2006
Publisher: IOP Publishing
Abstract: We report diameter-selective growth of GaN nanowires (NWs) by using mono-dispersed Au nanoparticles (NPs) on a ligand-modified Si substrate. The thiol-terminal silane was found to be effective in producing well-dispersed Au NPs in low density on Si substrates so that the agglomeration of Au NPs during growth could be avoided. The resultant GaN NWs exhibited a narrow diameter distribution and their mean diameter was always larger than, while keeping a deterministic relation with, the size of the Au NPs from which they were grown. A self-regulating steady growth model is proposed to account for the size-control process.
URI: http://rportal.lib.ntnu.edu.tw/handle/77345300/42324
ISSN: 0957-4484
Other Identifiers: ntnulib_tp_C0301_01_040
Appears in Collections:教師著作

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