Please use this identifier to cite or link to this item: http://rportal.lib.ntnu.edu.tw:80/handle/77345300/42322
Title: Electronic Structures of Group-III-Nitride Nanorods Studied by X-ray Absorption, X-ray Emission, and Raman Spectroscopy
Authors: 國立臺灣師範大學化學系
C.-W. Pao
P.-D. Babu
H.-M. Tsai
J.-W. Chiou
S.-C. Ray
S.-C. Yang
F.-Z. Chien
W.-F. Pong
M.-H. Tsai
C.-W. Hsu
L.-C. Chen
Chia-Chun Chen
K.-H. Chen
H.-J. Lin
J.-F. Lee
J.-H. Guo
Issue Date: 29-May-2006
Publisher: American Institute of Physics
Abstract: Nitrogen (N) and metal (Al, Ga, and In) K-edge x-ray absorption near-edge structure (XANES), x-ray emission spectroscopy (XES), and Raman scattering measurements were performed to elucidate the electronic structures of group-III–nitride nanorods and thin films of AlN, GaN, and InN. XANES spectra show slight increase of the numbers of unoccupied N p states in GaN and AlN nanorods, which may be attributed to a slight increase of the degree of localization of conduction band states. The band gaps of AlN, GaN, and InN nanorods are determined by an overlay of XES and XANES spectra to be 6.2, 3.5, and 1.9 eV, respectively, which are close to those of AlN and GaN bulk/films and InN polycrystals.
URI: http://rportal.lib.ntnu.edu.tw/handle/77345300/42322
ISSN: 0003-6951
Other Identifiers: ntnulib_tp_C0301_01_038
Appears in Collections:教師著作

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