Please use this identifier to cite or link to this item: http://rportal.lib.ntnu.edu.tw:80/handle/77345300/42319
Title: Sharp Infrared Emission from Single-Crystalline Indium Nitride Nanobelts Prepared Using Guided-Stream Thermal Chemical Vapor Deposition
Authors: 國立臺灣師範大學化學系
M.-S. Hu
W.-M. Wang
T.-T. Chen
L.-S. Hong
C.-W. Chen
Chia-Chun Chen
Y.-F. Chen
K.-H. Chen
L.-C. Chen
Issue Date: 1-Mar-2006
Publisher: Wiley-VCH Verlag
Abstract: Single-crystalline InN nanobelts have been synthesized using Au as the catalyst by a guided-stream thermal chemical vapor deposition technique. The resultant InN nanobelts typically have widths ranging from 20 to 200 nm, a width to thickness ratio of 2–10, and lengths of up to several tens of micrometers. Structural analysis shows that these InN nanobelts have a wurtzite structure and exhibit a rectangular cross section with self-selective facets, i.e., the nanobelts are enclosed only by ± (001) and ± (11?0) planes with [110] being the exclusive growth direction along their long axis. This facet selectivity can be understood by the differences in the surface energies of the different facets. Photoluminescence (PL) spectra of InN nanobelts show a sharp infrared emission peak at 0.76 eV with a full width at half maximum of 14 meV, narrower than the values reported for InN epilayers. The integrated PL intensity is found to increase linearly with the excitation power, which suggests that the observed PL can be attributed to direct band-to-band emission.
URI: http://rportal.lib.ntnu.edu.tw/handle/77345300/42319
ISSN: 1616-301X
Other Identifiers: ntnulib_tp_C0301_01_035
Appears in Collections:教師著作

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