Please use this identifier to cite or link to this item: http://rportal.lib.ntnu.edu.tw:80/handle/77345300/42303
Title: Interband Optical Transitions in GaN Nanotubes Encapsulated GaP nanowires
Authors: 國立臺灣師範大學化學系
M.-W. Lee
H.-C. Hseuh
H.-M. Lin
Chia-Chun Chen
Issue Date: 30-Apr-2003
Publisher: AMERICAN PHYSICAL SOCIETY
Abstract: This work investigates the optical properties of cylindrical GaP nanowires encapsulated inside GaN nanotubes (GaP@GaN). Many absorption structures are observed in the range of 2.0–4 eV. Calculations are performed to determine the quantized energy levels of electrons and holes confined in the GaP well. Analytical results indicate that the absorption peaks are attributable to interband optical transitions due to the confined carriers in the heterostructure.
URI: http://rportal.lib.ntnu.edu.tw/handle/77345300/42303
ISSN: 1098-0121
Other Identifiers: ntnulib_tp_C0301_01_019
Appears in Collections:教師著作

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