Please use this identifier to cite or link to this item: http://rportal.lib.ntnu.edu.tw:80/handle/77345300/36811
Title: Characteristics of In-Ge-Sb-Sn-Te Thin Film Used for Phase Change Optical Recording Media
Authors: 國立臺灣師範大學機電工程學系
Ou, Sin-Liang
Cheng, Chin-Pao
Yeh, Chin-Yen
Chung, Chung-Jen
Kao, Kuo-Sheng
Lin, Re-Ching
Issue Date: 1-Feb-2011
Publisher: Trans Tech Publications
Abstract: The In10GexSb52-xSn23Te15 films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the In10GexSb52-xSn23Te15 film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In10GexSb52-xSn23Te15 (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In10GexSb52-xSn23Te15 films with x = 2~9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.
URI: http://rportal.lib.ntnu.edu.tw/handle/77345300/36811
ISSN: 1022-6680
Other Identifiers: ntnulib_tp_E0401_01_025
Appears in Collections:教師著作

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