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|Other Titles:||The Transient Electrical Transport in Amorphous Semiconductors|
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|Abstract:||This paper ismainly concerned with the transient electric transport in amorphous semiconductors with very low energy excitation of infrared divergent nature. Moreover, it attempts to expound, with a modified Scher Montroll model, the discrepancy between temperature dependence of transit time given by time-of-fight experiments and other methods.|
|Appears in Collections:||師大學報|
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