Please use this identifier to cite or link to this item: http://rportal.lib.ntnu.edu.tw:80/handle/77345300/17213
Title: 非晶半導體的能隙狀態密度
Other Titles: The Gap State Density in Amorphous Semiconductors
Authors: 蘇賢錫
Issue Date: Jun-1984
Publisher: 國立臺灣師範大學研究發展處
Office of Research and Development
Abstract: A one-electron theory of non-equilibrium trap occupancy in amorphous semiconductors has been proposed, resulting in simple expressions for electrons in states above the equilibrium Fermi level. The state density is then obtained by transient photoconductivity analysis.
URI: http://rportal.lib.ntnu.edu.tw//handle/77345300/17213
Other Identifiers: 5E0FB565-FD8F-8920-D0BD-6E0A3C3EE778
Appears in Collections:師大學報

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