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dc.contributor.authorC.-W. Changen_US
dc.contributor.authorD.-Y. Wangen_US
dc.contributor.authorW.-C. Tanen_US
dc.contributor.authorI-S. Huangen_US
dc.contributor.authorI-S. Wangen_US
dc.contributor.authorChia-Chun Chenen_US
dc.contributor.authorY.-J. Yangen_US
dc.contributor.authorY.-F. Chenen_US
dc.description.abstractWe report the influence of carrier reflector and back surface field generated by dopedgraphene on n-ZnO nanoridges/p-silicon photodetectors and silicon solar cells. It is found that the p-type graphene not only acts as an electron blocking layer, but also helps the collection of photogenerated holes. Quite surprisingly, the on/off ratio of the photodetector with the insertion of dopedgraphene can be increased by up to 40 times. Moreover, we demonstrate that typical silicon solar cells with the dopedgraphene, the cell efficiency can be enhanced by about 20%. Our approach would expand numerous applications for graphene-based optoelectronic devices.en_US
dc.publisherAmerican Institute of Physics (AIP)en_US
dc.relationApplied Physics Letters, 101(7), 073906 (5 pages).en_US
dc.titleEnhanced performance of photodetector and photovoltaic based on carrier reflector and back surface field generated by doped grapheneen_US
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