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dc.contributor.authorD.-Y. Wangen_US
dc.contributor.authorI.-S. Wangen_US
dc.contributor.authorI.-S. Huangen_US
dc.contributor.authorY.-C. Yehen_US
dc.contributor.authorS.-S. Lien_US
dc.contributor.authorK.-H. Tuen_US
dc.contributor.authorChia-Chun Chenen_US
dc.contributor.authorC.-W. Chenen_US
dc.description.abstractIn this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.en_US
dc.publisherAmerican Chemical Societyen_US
dc.relationJournal of Physical Chemistry C., 116(18),10181-10185.en_US
dc.titleQuantum Dot Light-Emitting Diode Using Solution-Processable Graphene Oxide as the Anode Interfacial Layer.en_US
Appears in Collections:教師著作

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