Please use this identifier to cite or link to this item: http://rportal.lib.ntnu.edu.tw:80/handle/20.500.12235/42365
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dc.contributor國立臺灣師範大學化學系zh_tw
dc.contributor.authorD.-Y. Wangen_US
dc.contributor.authorI.-S. Wangen_US
dc.contributor.authorI.-S. Huangen_US
dc.contributor.authorY.-C. Yehen_US
dc.contributor.authorS.-S. Lien_US
dc.contributor.authorK.-H. Tuen_US
dc.contributor.authorChia-Chun Chenen_US
dc.contributor.authorC.-W. Chenen_US
dc.date.accessioned2014-12-02T06:41:37Z-
dc.date.available2014-12-02T06:41:37Z-
dc.date.issued2012-05-10zh_TW
dc.identifierntnulib_tp_C0301_01_081zh_TW
dc.identifier.issn1932-7447zh_TW
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42365-
dc.description.abstractIn this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.en_US
dc.description.urihttp://pubs.acs.org/doi/pdf/10.1021/jp210062xzh_TW
dc.languageen_USzh_TW
dc.publisherAmerican Chemical Societyen_US
dc.relationJournal of Physical Chemistry C., 116(18),10181-10185.en_US
dc.relation.urihttp://dx.doi.org/10.1021/jp210062xzh_TW
dc.titleQuantum Dot Light-Emitting Diode Using Solution-Processable Graphene Oxide as the Anode Interfacial Layer.en_US
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