請用此 Handle URI 來引用此文件: http://rportal.lib.ntnu.edu.tw:80/handle/20.500.12235/42365
標題: Quantum Dot Light-Emitting Diode Using Solution-Processable Graphene Oxide as the Anode Interfacial Layer.
作者: 國立臺灣師範大學化學系
D.-Y. Wang
I.-S. Wang
I.-S. Huang
Y.-C. Yeh
S.-S. Li
K.-H. Tu
Chia-Chun Chen
C.-W. Chen
公開日期: 10-五月-2012
出版社: American Chemical Society
摘要: In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.
URI: http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42365
ISSN: 1932-7447
其他識別: ntnulib_tp_C0301_01_081
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