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dc.contributor.authorL.-C. Lien_US
dc.contributor.authorK.-H. Huangen_US
dc.contributor.authorJ.-A. Weien_US
dc.contributor.authorY.-W. Suenen_US
dc.contributor.authorT.-W. Liuen_US
dc.contributor.authorChia-Chun Chenen_US
dc.contributor.authorL.-C. Chenen_US
dc.contributor.authorK.-H. Chenen_US
dc.description.abstractWe report the properties of low-frequency contact noise of multielectrode GaN nanowire (NW) devices. A two-port cross-spectrum technique is used to discriminate the noise of the ohmic contact from that of the NW section. The diameter of the GaN NW is around 100 nm. The Ti/Al electrodes of the NWs are defined by e-beam lithography. The typical resistance of a NW section with a length of 800 nm is about 5.5 kΩ and the two-wire resistance is below 100 kΩ. The results show that the low-frequency excess noise of the GaN NW is much smaller than that of the current-flowing contact, indicating that the contact noise dominates the noise behavior in our GaN NW devices. A careful study of the noise amplitude (A) of the 1/f noise of different types of NW and carbon nanotube devices, both in our work and in the literature, yields an empirical formula for estimating A from the two-wire resistance of the device.en_US
dc.publisherJapan Society of Applied Physicsen_US
dc.relationJapanes Journal of Applied Physics, 50(6), SI, 06GF21.en_US
dc.titleLow-Frequency Contact Noise of GaN Nanowire Device Detected by Cross-Spectrum Technique.en_US
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