Bitte benutzen Sie diese Kennung, um auf die Ressource zu verweisen: http://rportal.lib.ntnu.edu.tw:80/handle/20.500.12235/42359
Titel: Low-Frequency Contact Noise of GaN Nanowire Device Detected by Cross-Spectrum Technique.
Autoren: 國立臺灣師範大學化學系
L.-C. Li
K.-H. Huang
J.-A. Wei
Y.-W. Suen
T.-W. Liu
Chia-Chun Chen
L.-C. Chen
K.-H. Chen
Erscheinungsdatum: 1-Jun-2011
Herausgeber: Japan Society of Applied Physics
Zusammenfassung: We report the properties of low-frequency contact noise of multielectrode GaN nanowire (NW) devices. A two-port cross-spectrum technique is used to discriminate the noise of the ohmic contact from that of the NW section. The diameter of the GaN NW is around 100 nm. The Ti/Al electrodes of the NWs are defined by e-beam lithography. The typical resistance of a NW section with a length of 800 nm is about 5.5 kΩ and the two-wire resistance is below 100 kΩ. The results show that the low-frequency excess noise of the GaN NW is much smaller than that of the current-flowing contact, indicating that the contact noise dominates the noise behavior in our GaN NW devices. A careful study of the noise amplitude (A) of the 1/f noise of different types of NW and carbon nanotube devices, both in our work and in the literature, yields an empirical formula for estimating A from the two-wire resistance of the device.
URI: http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42359
ISSN: 0021-4922
Sonstige Kennungen: ntnulib_tp_C0301_01_075
Enthalten in den Sammlungen:教師著作

Dateien zu dieser Ressource:
Es gibt keine Dateien zu dieser Ressource.


Alle Ressourcen in diesem Repository sind urheberrechtlich geschützt, soweit nicht anderweitig angezeigt.