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dc.contributor.authorZ.-H. Lanen_US
dc.contributor.authorW.-M. Wangen_US
dc.contributor.authorC.-L. Sunen_US
dc.contributor.authorS.-C. Shien_US
dc.contributor.authorC.-W. Hsuen_US
dc.contributor.authorT.-T. Chenen_US
dc.contributor.authorK.-H. Chenen_US
dc.contributor.authorChia-Chun Chenen_US
dc.contributor.authorY.-F. Chenen_US
dc.contributor.authorL.-C. Chenen_US
dc.description.abstractHigh-quality single crystal indium nitride nanorods were grown on Si substrates by catalytic chemical vapor deposition. Both Raman and high resolution transmission electron microscopic analyses suggested that even a minute amount of oxygen, from the residual oxygen in the growth environment and/or native oxide on the Si, would effectively help the growth of InN nanorods. The In2O3 formed on Au nanoparticles helped dissolve nitrogen as a catalyst with the subsequent growth of InN nanorods. Variations in the apparent color and photoluminescence (PL) spectra of the InN nanorods were observed. For the optically brown InN nanorods that exhibited diameters in the range of 30–50 nm, the PL study showed a peak at 1.9 eV, the possible origins of which are discussed. In contrast, for the optically black InN nanorods that exhibited diameters in the range of 50–100 nm, the PL peak at approximately 0.766 eV measured at 20 K was attributed to band edge emission.en_US
dc.relationJournal of Crystal Growth, 269(1), 87-94.en_US
dc.subject.otherA1. Photoluminescenceen_US
dc.subject.otherB1. Indium nitrideen_US
dc.subject.otherB1. Nanorodsen_US
dc.titleGrowth Mechanism, Structure and IR Photoluminescence Studies of Indium Nitride Nanorodsen_US
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