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dc.contributor.authorS. Daharaen_US
dc.contributor.authorA. Dattaen_US
dc.contributor.authorC.-T. Wuen_US
dc.contributor.authorZ.-H. Lanen_US
dc.contributor.authorK.-H. Chenen_US
dc.contributor.authorY. -L. Wangen_US
dc.contributor.authorC.-W. Hsuen_US
dc.contributor.authorC.-H. Shenen_US
dc.contributor.authorL.-C. Chenen_US
dc.contributor.authorChia-Chun Chenen_US
dc.description.abstractHexagonal to cubic phase transformation is studied in focused ion beam assisted Ga+-implanted GaNnanowires. Optical photoluminescence and cathodoluminescence studies along with high-resolution transmission electron microscopic structural studies are performed to confirm the phase transformation. In one possibility, sufficient accumulation of Ga from the implanted source might have reduced the surface energy and simultaneously stabilized the cubic phase. Another potential reason may be that the fluctuations in the short-range order induced by enhanced dynamic annealing (defect annihilation) with the irradiation process stabilize the cubic phase and cause the phase transformation.en_US
dc.publisherAmerican Institute of Physics (AIP)en_US
dc.relationApplied Physics Letters, 84(26), 5473-5475.en_US
dc.titleHexagonal-to-Cubic Phase Transformation in GaN Nanowires by Ga+ Implantationen_US
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