Please use this identifier to cite or link to this item: http://rportal.lib.ntnu.edu.tw:80/handle/20.500.12235/42312
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dc.contributor國立臺灣師範大學化學系zh_tw
dc.contributor.authorS. Daharaen_US
dc.contributor.authorA. Dattaen_US
dc.contributor.authorC.-T. Wuen_US
dc.contributor.authorZ.-H. Lanen_US
dc.contributor.authorK.-H. Chenen_US
dc.contributor.authorY. -L. Wangen_US
dc.contributor.authorC.-W. Hsuen_US
dc.contributor.authorC.-H. Shenen_US
dc.contributor.authorL.-C. Chenen_US
dc.contributor.authorChia-Chun Chenen_US
dc.date.accessioned2014-12-02T06:41:32Z-
dc.date.available2014-12-02T06:41:32Z-
dc.date.issued2004-06-28zh_TW
dc.identifierntnulib_tp_C0301_01_028zh_TW
dc.identifier.issn0003-6951zh_TW
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42312-
dc.description.abstractHexagonal to cubic phase transformation is studied in focused ion beam assisted Ga+-implanted GaNnanowires. Optical photoluminescence and cathodoluminescence studies along with high-resolution transmission electron microscopic structural studies are performed to confirm the phase transformation. In one possibility, sufficient accumulation of Ga from the implanted source might have reduced the surface energy and simultaneously stabilized the cubic phase. Another potential reason may be that the fluctuations in the short-range order induced by enhanced dynamic annealing (defect annihilation) with the irradiation process stabilize the cubic phase and cause the phase transformation.en_US
dc.description.urihttp://scitation.aip.org/docserver/fulltext/aip/journal/apl/84/26/1.1760593.pdf?expires=1395217912&id=id&accname=424340&checksum=EB3C57784C18C944513E17A8CC836BC0zh_TW
dc.languageen_USzh_TW
dc.publisherAmerican Institute of Physics (AIP)en_US
dc.relationApplied Physics Letters, 84(26), 5473-5475.en_US
dc.relation.urihttp://dx.doi.org/10.1063/1.1760593zh_TW
dc.titleHexagonal-to-Cubic Phase Transformation in GaN Nanowires by Ga+ Implantationen_US
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