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dc.contributor.authorH.-M. Linen_US
dc.contributor.authorY.-L. Chenen_US
dc.contributor.authorJ. Yangen_US
dc.contributor.authorY.-C. Liuen_US
dc.contributor.authorK.-M. Yinen_US
dc.contributor.authorJ.-J. Kaien_US
dc.contributor.authorF.-R. Chenen_US
dc.contributor.authorL.-C. Chenen_US
dc.contributor.authorY.-F. Chenen_US
dc.contributor.authorChia-Chun Chenen_US
dc.description.abstractA convenient thermal CVD route to core−shell GaP@GaN and GaN@GaP nanowires is developed. The structural analyses indicate that the nanowires exhibit a two-layer and wirelike structure. High-resolution transmission electron microscopy (HRTEM) images reveal misfit dislocation loops at the interface of the nanowires. Unusual temperature dependences of the photoluminescence (PL) intensity of GaP@GaN nanowires are observed, and they are interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. In the Raman spectra of GaN@GaP nanowires, an unexpected peak at 386 cm-1 is found and assigned to a surface phonon mode.en_US
dc.publisherAmerican Chemical Societyen_US
dc.relationNano Letters, 3(4), 537-541.en_US
dc.titleSynthesis and Characterization of Core-Shell GaP@GaN and GaN@GaP Nanowiresen_US
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