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Development of Infrared Image Sensor with CMOS Integration by a Polymer Piezoelectric Film of Photosensitive Poly(Vinylidene Fluoride) (PVDF)
|Abstract:||高分子壓電材料聚偏二氟乙烯Poly(vinylidene fluoride) (PVDF)早期研究皆是以薄片式貼合或塗佈整面晶片方式來完成元件製作，其相對尺寸受到限制。本研究則將PVDF 粉末溶解於溶劑中，並添加必要的感光劑與交聯劑，自行配製具有負型感光特性之溶液，經旋轉均勻塗佈後，再結合UV微影製程，可使此薄膜同時具有局部定義圖案之光阻特性，並同時保留PVDF 壓電特性之優點。結合此兩大優點，可使要求壓電特性之元件易於微小化，再配合PVDF 具有之壓電高靈敏特性，可進一步地應用於相關微感測器與微致動器之製作。|
In the field of MEMS fabrication processes, polymer piezoelectric material Poly(vinylidene fluoride) (PVDF) was used usually by the sheet shape gluing or spinning technique onto the substrate and finished the microdevices, but their sizes can't be miniaturized. In our study, the powder of PVDF was used and prepared as the photosensitive negative resist by adding the appropriate amount of agents into the PVDF solution. The prepared photosensitive PVDF thin film was tested through the UV lithography process preliminarily, it has been verified that the novel negative-tone PVDF resist can be patterned easily and its piezoelectric characteristic still is retained. This implies that the developed PVDF film is suitable for the MEMS fabrication process; the microdevices with piezoelectric properties will be realized by using the essential advantages of this new material in the future.
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