A 25-75-GHz broadband Gilbert-cell mixer using 90-nm CMOS technology

Jeng-Han Tsai; Pei-Si Wu; Chin-Shen Lin; Tian-Wei Huang; John G.J. Chern; Wen-Chu Huang; Huei Wang

A 25-75-GHz broadband Gilbert-cell mixer using 90-nm CMOS technology

Date

2007-04-01

Authors

Jeng-Han Tsai

Pei-Si Wu

Chin-Shen Lin

Tian-Wei Huang

John G.J. Chern

Wen-Chu Huang

Huei Wang

Publisher

IEEE Microwave Theory and Techniques Society

Abstract

A compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer transconductance stage design is introduced to achieve the flatness of conversion gain and good RF port impedance match over broad bandwidth. This Gilbert-cell mixer exhibits 3plusmn2dB measured conversion gain (to 50-Omega load) from 25 to 75GHz with a compact chip size of 0.30mm2. The OP1 dB of the mixer is 1dBm and -4dBm at 40 and 60GHz, respectively. To the best of our knowledge, this monolithic microwave integrated circuit is the highest frequency CMOS Gilbert-cell mixer to date