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dc.contributor.authorJeng-Han Tsaien_US
dc.contributor.authorTian-Wei Huangen_US
dc.description.abstractThis letter describes the first demonstration of a fully integrated Doherty power amplifier (PA) monolithic microwave integrated circuit (MMIC) with post-distortion linearization at millimeter-wave (MMW) frequency band. The Doherty amplifier MMIC, using a 0.15-mum GaAs HEMT process, achieves a small signal gain of 7dB from 38 to 46GHz with a compact chip size of 2mm2. The saturation output power of the Doherty amplifier is 21.8dBm. The similar topology between the Doherty amplifier and post-distortion linearization makes it possible to improve efficiency and linearity simultaneously in MMW PA designs. After gate bias optimization of the main and peaking amplifier, the drain efficiency improved 6% at 6-dB output back-off and the inter-modulation distortion (IMD) of quasi Doherty amplifier can be improved 18dB at 42GHz compared with the balanced amplifier operationen_US
dc.publisherIEEE Microwave Theory and Techniques Societyen_US
dc.relationIEEE Microwave and Wireless Components Letters, 17(5), 388-390.en_US
dc.subject.otherDoherty amplifieren_US
dc.subject.othermillimeter-wave (MMW)en_US
dc.subject.othermonolithic microwave integrated circuit (MMIC)en_US
dc.titleA 38-46-GHz MMIC Doherty power amplifier using post-distortion linearizationen_US
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