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Investigation of Epi-InN Materials Grown on Surface Nitride Si (111) Substrate by RF-CBE
In this research, radio frequency plasma assisted molecular beam epitaxy system was used to grow SixNy buffer layer on silicon (111) substrate. The flow ratio of growth the buffer layer and the nitriding time have been studied. The structure, crystallinity and electron mobility of indium nitride grown under different treatment buffer were investigated. SixNy layer was produced on the surface of the silicon (111) substrate under experimental conditions. With the increasing of the nitriding time and the flow ratio, the formation of β-Si3N4 crystalline was found on the substrate surface. This enhanced the nucleation quality of the wurtzite InN epitaxy film. It was confirmed by XRD that the epi-InN materials was successfully growth on all nitrided-substrates. The properties of InN epitaxy film in the preparation of nitrided-InN/ SixNy double buffer layer on silicon (111) substrate has also been studied. InN epitaxy film which used double buffer layer can improve the crystallinity and the electrical properties effectively. With the increasing of nitrogen flow rate and nitridation time of silicon nitride buffer layer, the crystallinity and the electron mobility increased.
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