Please use this identifier to cite or link to this item: http://rportal.lib.ntnu.edu.tw:80/handle/20.500.12235/102496
Full metadata record
DC FieldValueLanguage
dc.contributor蔡志申zh_TW
dc.contributorTsay, Jyh-Shenen_US
dc.contributor.author張育杰zh_TW
dc.contributor.authorChang, Yu-Chienen_US
dc.date.accessioned2019-09-05T02:10:09Z-
dc.date.available不公開
dc.date.available2019-09-05T02:10:09Z-
dc.date.issued2016
dc.identifierG060341040S
dc.identifier.urihttp://etds.lib.ntnu.edu.tw/cgi-bin/gs32/gsweb.cgi?o=dstdcdr&s=id=%22G060341040S%22.&%22.id.&
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw:80/handle/20.500.12235/102496-
dc.description.abstract本研究在水溶液環境中利用電化學的方式成長Co薄膜在Cu(100)及graphene /Cu上並進行磁性量測,再加入紫精酸的異質介面,研究Co薄膜在不同的介面對磁特性的影響,其中使用循環伏安法量測其成分組成,並使用磁光柯爾效應進行磁性量測。發現5至20 nm的Co薄膜在Cu(100)及graphene/Cu表面上成長,隨著厚度上升皆表現出縱向方向為磁化易軸,接著進一步分析縱向的磁滯曲線可以得到其飽和磁化量、殘磁、方正度以及矯頑力。Co/Cu(100)於不同電位測量時,其飽和磁化量、殘磁、矯頑力並無明顯的變化,而Co/graphene/Cu上則在特定的厚度會產生雙磁滯曲線疊加的現象,並且隨著電位可以控制其磁特性,比較石墨烯插層對Co/Cu薄膜的矯頑力影響,發現在任何電位下Co/Cu(100)薄膜的矯頑力皆大於Co/graphene /Cu薄膜。而後在Co/Cu(100)上覆蓋紫精酸會使得較薄的Co膜其飽和磁化量與殘磁下降且矯頑力上升,但是至12 nm以上時便不受影響,然而Co/grap hene/Cu於不同電位測量時,覆蓋紫精酸並無明顯變化。此研究發現在紫精酸及石墨烯之異質介面對Co薄膜受電位控制時的磁特性有微小的變化,對於開發電控制磁性元件附有應用潛力。zh_TW
dc.description.sponsorship物理學系zh_TW
dc.language中文
dc.subject石墨烯zh_TW
dc.subject磁光柯爾效應zh_TW
dc.subject電鍍zh_TW
dc.subjectzh_TW
dc.subject銅(100)zh_TW
dc.subject循環伏安法zh_TW
dc.subjectGrapheneen_US
dc.subjectCopper(100)en_US
dc.subjectCobalten_US
dc.subjectelectrodepositionen_US
dc.subjectMOKEen_US
dc.subjectCVen_US
dc.title石墨烯插層對Co/Cu薄膜的磁特性影響研究zh_TW
Appears in Collections:學位論文

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.