電機工程學系
Permanent URI for this communityhttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/85
歷史沿革
本系成立宗旨在整合電子、電機、資訊、控制等多學門之工程技術，以培養跨領域具系統整合能力之電機電子科技人才為目標，同時配合產業界需求、支援國家重點科技發展，以「系統晶片」、「多媒體與通訊」、與「智慧型控制與機器人」等三大領域為核心發展方向，期望藉由學術創新引領產業發展，全力培養能直接投入電機電子產業之高級技術人才，厚植本國科技產業之競爭實力。
本系肇始於民國92年籌設之「應用電子科技研究所」，經一年籌劃，於民國93年8月正式成立，開始招收碩士班研究生，以培養具備理論、實務能力之高階電機電子科技人才為目標。民國96年8月「應用電子科技學系」成立，招收學士班學生，同時間，系所合一為「應用電子科技學系」。民國103年8月更名為「電機工程學系」，民國107年電機工程學系博士班成立，完備從大學部到博士班之學制規模，進一步擴展與深化本系的教學與研究能量。
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Item A high-efficiency, broadband and high output power PHEMT balanced K-band doubler with integrated balun(2006-12-15) Wen-Ren Lee,Shih-Fong Chao; Zuo-Min Tsai,Pin-Cheng Huang; Chun-Hsien Lien; Jeng-Han Tsai; Huei WangA high-efficiency and high output power K-band frequency doubler using InGaAs PHEMT power device is developed, which features high fundamental frequency rejection, high efficiency, good conversion gain over wide bandwidth, and high output power. A compact lumped rat-race hybrid and an output buffer amplifier are implemented on chip for a balanced design and high output power. The circuit exhibits measured conversions gain about 8 dB over the output frequencies from 12 to 22 GHz. The fundamental frequency suppression is better than 20 dB and the second harmonic saturation output power is higher than 12 dBm with a miniature chip size of 2 mm x 1 mm.Item A high-efficiency, broadband and high output power pHEMT balanced K-band doubler with integrated balun(2006-12-15) Wen-Ren Lee; Shih-Fong Chao; Zuo-Min Tsai; Pin-Cheng Huang; Chun-Hsien Lien; Jeng-Han Tsai; Huei WangA high-efficiency and high output power K-band frequency doubler using InGaAs PHEMT power device is developed, which features high fundamental frequency rejection, high efficiency, good conversion gain over wide bandwidth, and high output power. A compact lumped rat-race hybrid and an output buffer amplifier are implemented on chip for a balanced design and high output power. The circuit exhibits measured conversions gain about 8 dB over the output frequencies from 12 to 22 GHz. The fundamental frequency suppression is better than 20 dB and the second harmonic saturation output power is higher than 12 dBm with a miniature chip size of 2 mm x 1 mm.Item A Q-band miniature monolithic subharmonically pumped resistive mixer(2006-12-01) Shih-Yu Chen; Jeng-Han Tsai; Pei-Si Wu; Tian-Wei Huang; Huei WangThis paper proposes a miniature Q-band monolithic subharmonically pumped resistivemixer, consisting of two pHEMT transistors, a LOreduced-size Marchand balun and RF/IF filters. Thecompact RF/IF diplex circuit and a reduced-sizebalun were used to minimize the chip size whichresults only 0.72 mm 2 . Besides, 5 dBm LO inputpower is needed which is one-third of othersubharmonically pumped mixers with more than 10dBm LO power. This mixer exhibits 12.5 � 1.5 dBup-conversion loss and 12 � 1 dB down-conversionloss with 5 dBm LO input power. Up-conversion 1-dB compression output power is -15dBm and down-conversion 1-dB compression output power is -12dBm. To our knowledge, this mixer has goodconversion with smallest chip size and minimum LOinput power.Item Minimum ACPR “sweet-spot” using statistical power distribution function(2006-12-15) Jeng-Han Tsai; Shih-Yu Chen; Wei-Chien Chen; Tian-Wei HuangDuring the linearity optimization, the ACPR improvement is quite different from the inter-modulation third-order distortion ratio (IM3R) improvement, but there exist some relation between ACPR and IM3R To correlate the IM3R and ACPR, we propose the statistical probability density function (PDF) method to predict the relation between the ACPR improvement and the IM3R improvement for weekly nonlinear amplifiers. There is a 10 dB difference between measured ACPR and IM3R near sweet spot region, however, through our modification process, only 2-3 dB difference between our theoretical prediction and measured ACPR exist. Two of the modulation signals, W-CDMA and QPSK, have been proved that the prediction of ACPR from two-tone IM3R can be much closed to the measured one as long as the modified PDF term is utilized.Item A 30-GHz Low-Phase-Noise 0.35-μm CMOS Push-Push Oscillator Using Micromachined Inductors(2006-06-16) To-Po Wang; Ren-Chieh Liu; Hong-Yeh Chang; Jeng-Han Tsai; Liang-Hung Lu; Huei WangA low-phase-noise 0.35-mum CMOS push-push oscillator utilizing micromachined inductors is presented in this paper. With the micromachined high-Q inductors, the oscillator achieves an oscillating frequency of 30.9 GHz while exhibiting an output power of -4 dBm with a low phase noise of -102.3 dBc/Hz at 1-MHz offset and the figure of merit (FoM) of -171.4 dBc/Hz. The fundamental rejection is 30 dB. This oscillator achieves low phase noise, good FOM, high output power, and also demonstrates the highest operating frequency among previously published Si-based and GaAs-based VCOs using micromachined structuresItem A compact 35-65 GHz up-conversion mixer with integrated broadband transformers in 0.18-μm SiGe BiCMOS technology(2006-06-01) Ping-Chen Huang; Ren-Chieh Liu; Jeng-Han Tsai; Hong-Yeh Chang; Huei Wang; John Yeh,Chwan-Ying Lee; John ChernThis paper presents a compact 35-65 GHz Gilbert cell up-convert mixer implemented in TSMC 0.18- ȝm SiGe BiCMOS technology. Integrated broadband transformers and meandered thin-film microstrip lines were utilized to achieve a miniature chip area of 0.6 mm × 0.45 mm. The compact MMIC has a flat measured conversion loss of 7 ± 1.5 dB and LO suppression of more than 40 dB at the RF port from 35 to 65 GHz. The power consumption is 14 mW from a 4-V supply. This is a fully integrated millimeterwave active mixer that has the smallest chip area ever reported, and also the highest operation frequency among up-conversion mixers using silicon-based technology.Item 40-48 GHz sub-harmonic transceiver for high data-rate communication system applications(2008-04-24) Jeng-Han Tsai; To-Po Wang; Kun-You Lin; Tian-Wei Huang; Yi-Cheng Lin; Hsin-Chia Lu; Huei WangA 40-48 GHz sub-harmonic transceiver module for millimeter-wave (MMW) high data-rate communication systems has been developed in this paper. The highlights are a sub-harmonic transmitter with 12 plusmn 3 dB conversion gain, a power amplifier with 17 plusmn 2 dBm output power, a low noise amplifier with 5 plusmn 1.5 dB noise figure, and a sub-harmonic mixer with 15 plusmn 3 dB conversion loss from 40 to 48 GHz. Furthermore, two kinds of MMW high data-rate communication applications using the 40-48 GHz sub-harmonic transceiver module were demonstrated. The experimental results show that the 40-48 GHz transceiver has Gigabit transmission capability.Item A 35-45-GHz CMOS Amplifier with Defected Ground Structure Matching Networks(2009-04-22) Jeng-Han Tsai; Chieh-Cheng WangItem A 30-60GHz CMOS sub-harmonic IQ de/modulator for high data-rate communication system applications(2009-01-22) Wei-Heng Lin; Wei-Lun Chang; Jeng-Han Tsai; Tian-Wei HuangA 30-60 GHz sub-harmonic IQ de/modulator using TSMC CMOS 0.13-mum process is presented in this paper. The IQ de/modulator consists of two FET resistive mixers, a 90deg coupler, and a Wilkinson power divider. The resistive mixer could simultaneously used as a up-converted or a down-converted mixer. Therefore, the measurement of the FET resistive mixer based modulator or demodulator will be done. The die size is 0.78 mm times 0.58 mm. Both IQ demodulator and modulator feature the conversion loss of -16plusmn1 dB and good demodulation and modulation capacity.Item A 1.7-mW, 14.4% Frequency Tuning,24GHz VCO with Current-Reused Structure Using 0.18-μm CMOS Technology(2009-06-01) Yen-Hung Kuo; Jeng-Han Tsai; Tian-Wei Huang